Improvement of MOVPE Grown (112̄2) Oriented GaN 25 Improvement of MOVPE Grown (112̄2) Oriented GaN on Pre-Structured Sapphire Substrates Using a SiNx Interlayer and HVPE Overgrowth
نویسنده
چکیده
In this article two methods for improvements of (112̄2) oriented semipolar GaN grown by MOVPE on pre-structured sapphire substrates are investigated. The integration of a SiNx interlayer helps to obtain a better crystal quality. Also the overgrowth of the MOVPE samples by HVPE is a way to obtain a smoother GaN surface. A high incorporation of oxygen on (112̄2) oriented GaN compared to (0001) oriented GaN grown by HVPE was observed.
منابع مشابه
Doping Behavior of (112̄2)-GaN Grown on Patterned Sapphire Substrates
We present results of the investigation on the doping behavior of planar semipolar (112̄2)oriented GaN grown on (101̄2) patterned sapphire substrates mainly focusing on the magnesium incorporation. We observed that Mg is incorporated with much lower efficiency into the (112̄2) plane as compared to polar c-plane GaN. This problem could be decreased by varying the growth temperature. On the one hand...
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